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STPS2060CT
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY DESCRIPTION High voltage dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters. Packaged in TO-220AB, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses are required. ABSOLUTE R ATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current Tcase = 120C VR = 60V = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1kHz tp = 100 s Parameter Repetitive peak reverse voltage Per diode Per diode Per device Per diode Per diode Per diode Value 60 30 10 20 200 1 1 - 65 to + 150 150 10000 V/s Unit V A A TO-220AB
A1 K A2
2 x 10 A 60 V 0.58 V
A1 K A2
IFSM IRRM IRSM Tstg Tj dV/dt
Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum junction temperature
A A A C
Critical rate of rise of reverse voltage
July 1998 - Ed : 1C
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STPS2060CT
THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 1.6 0.9 0.15 C/W Unit C/W
When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL STATIC CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Test Conditions VR = VRRM Tj = 25C Tj = 125C VF ** Forward voltage drop IF = 20 A IF = 10 A IF = 20 A C Capacitance 60 V, 1MHz Tj = 125C Tj = 125C Tj = 25C Tj = 125C 150 0.58 Min. Typ. Max. 70 33 0.8 0.67 0.94 pF Unit A mA V
Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % To evaluate the conduction losses use the following equation : 2 P = 0.54 x IF(AV) + 0.013 x IF (RMS)
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STPS2060CT
PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. Millimeters Min. A C
H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A
Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409
Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40
4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10
D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam.
16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93
0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154
2.6 typ. 3.75 3.85
0.102 typ. 0.147 0.151
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 3/3

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